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KST5086/5087 KST5086/5087 Low Noise Transistor 3 2 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature 1 SOT-23 1. Base 2. Emitter 3. Collector Value -50 -50 -3 -50 350 150 Units V V V mA mW C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO BVCEO ICBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain : KST5086 : KST5087 : KST5086 : KST5087 : KST5086 : KST5087 VCE(sat) VBE(sat) fT Cob NF Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure : KST5086 : KST5087 : KST5087 IC= -100A, VCE= -5V RS=3K, f=1KHz VCE= -5V, IC= -20mA RS=10K, f=10Hz to 15.7KHz 3 2 2 dB dB dB VCE= -5V, IC= -100A VCE= -5V, IC= -1mA VCE= -5V, IC= -10mA IC= -10mA, IB= -1mA IC= -10mA, IB= -1mA VCE= -5V, IC= -500A f=20MHz VCB= -5V, IE=0 f=100MHz 40 4 150 250 150 250 150 250 500 800 Test Condition IC= -100A, IE=0 IC= -1mA, IB=0 VCB= -20V, IE=0 Min. -50 -50 -50 Max. Units V V nA -0.3 -0.85 V V MHz pF Marking Code Type Mark KST5086 2P KST5087 2Q Marking 2P (c)2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST5086/5087 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 -10 VCE = -5V KST5087 IC = 10 IB hFE, DC CURRENT GAIN 100 KST5086 -1 V BE(sat) 10 -0.1 VCE(sat) 1 -0.1 -1 -10 -100 -0.01 -0.1 -1 -10 -100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -100 100 IC[mA], COLLECTOR CURRENT f = 100KHz IE = 0 -10 Cob[pF], CAPACITANCE -0.6 -0.8 -1.0 -1.2 VCE = -5V 10 -1 1 -0.1 -0.0 -0.2 -0.4 0.1 -1 -10 -100 VBE[V], BASE-EMITTER VOLTAGE VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter On Voltage Figure 4. Output Capacitance fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 VCE = -5V 100 10 1 -0.1 -1 -10 -100 IC[mA], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product (c)2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST5086/5087 Package Dimensions SOT-23 0.20 MIN 2.40 0.10 0.40 0.03 1.30 0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 0.03 0.96~1.14 2.90 0.10 0.12 -0.023 +0.05 0.95 0.03 0.95 0.03 1.90 0.03 0.508REF 0.97REF Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. I1 |
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